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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. april 2013 docid024553 rev 1 1/12 12 stf9nm60n(045y) n-channel 600 v, 0.63 typ., 6.5 a mdmesh? ii power mosfet in a to-220fp narrow leads package datasheet ? preliminary data figure 1. internal schematic diagram features ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance applications ? switching applications description this device is an n-channel power mosfet developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. $0y '7$% * 6 to-220fp narrow leads 1 2 3 order code v ds r ds(on) max i d p tot stf9nm60n(045y) 650 v 0.745 6.5 a 25 w table 1. device summary order code marking package packaging stf9nm60n(045y) 9nm60n to-220fp narrow leads tube www.st.com
contents stf9nm60n(045y) 2/12 docid024553 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
docid024553 rev 1 3/12 stf9nm60n(045y) electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 6.5 (1) 1. limited only by maximum temperature allowed a i d drain current (continuous) at t c = 100 c 4 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 26 (1) a p tot total dissipation at t c = 25 c 25 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v dv/dt (3) 3. i sd 6.5 a, di/dt 400 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 5 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max ) 2.5 a e as single pulse avalanche energy (starting tj = 25 c, i d = i ar , v dd = 50 v) 115 mj
electrical characteristics stf9nm60n(045y) 4/12 docid024553 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 3.25 a 0.63 0.745 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 452 - pf c oss output capacitance - 30 - pf c rss reverse transfer capacitance -1.45 - pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds . equivalent output catacitance v gs = 0, v ds = 0 to 480 v - 79 - pf q g total gate charge v dd = 480 v, i d = 6.5 a, v gs = 10 v, (see figure 14) -17.4 - nc q gs gate-source charge - 3 - nc q gd gate-drain charge - 9.7 - nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level=20 mv open drain -4.8 -
docid024553 rev 1 5/12 stf9nm60n(045y) electrical characteristics table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 480 v, i d = 6.5 a r g =4.7 v gs = 10 v (see figure 13) -28-ns t r rise time - 23 - ns t d(off) turn-off delay time - 52.5 - ns t f fall time - 26.7 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 6.5 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 26 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 6.5 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 6.5 a, di/dt = 100 a/s v dd = 60 v (see figure 18) -264 ns q rr reverse recovery charge - 1.9 c i rrm reverse recovery current - 14.6 a t rr reverse recovery time i sd = 6.5 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 18) -324 ns q rr reverse recovery charge - 2.3 c i rrm reverse recovery current - 14.2 a
electrical characteristics stf9nm60n(045y) 6/12 docid024553 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on resistance i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 am08164v1 i d 6 4 2 0 0 10 v ds (v) 20 (a) 5 15 25 8 10 5v 6v v gs =10v 30 12 am08165v1 i d 6 4 2 0 0 4 v gs (v) 8 (a) 2 6 10 8 10 12 v ds =20v am08166v1 v gs 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =480v i d =6.5a 12 300 200 100 0 400 500 v ds v gs am08167v1 r ds(on) 0.62 0.61 0.60 0.59 0 2 i d (a) ( ) 1 3 0.63 0.64 0.65 0.66 v gs =10v 5 4 6 am08168v1
docid024553 rev 1 7/12 stf9nm60n(045y) electrical characteristics figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. normalized b vdss vs temperature c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am08169v1 e oss 1.5 1 0.5 0 0 100 v ds (v) (j) 400 2 200 300 2.5 3 500 600 3.5 am08170v1 v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 am08171v1 r ds(on) 1.9 1.5 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 i d =3.25a 0.7 1.1 1.3 1.7 2.1 am08172v1 bv dss -50 0 t j (c) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.03 1.05 1.07 i d =1ma am08173v1
test circuits stf9nm60n(045y) 8/12 docid024553 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid024553 rev 1 9/12 stf9nm60n(045y) package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data stf9nm60n(045y) 10/12 docid024553 rev 1 figure 19. to-220fp narrow leads drawing table 9. to-220fp narrow leads mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 0.95 1.20 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 15.20 15.60 l3 28.6 30.6 l4 10.3 11.1 l5 2.60 2.70 2.90 l6 15.8 16.0 16.2 l7 9 9.3 dia 3 3.2 8197858_rev_b
docid024553 rev 1 11/12 stf9nm60n(045y) revision history 5 revision history table 10. document revision history date revision changes 16-apr-2013 1 first release.
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